The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200â���¼m and 400â���¼m diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35â��keV. The diodes were also electrically characterized: capacitance, implied depletion width and dark current measurements as functions of applied bias at room temperature are presented. At -5â��V reverse bias, the capacitances of the diodes were measured to be (84.05â���±â��0.01) pF and (121.67â���±â��0.02) pF, respectively. At -5â��V reverse bias, the dark current densities of the diodes were measured to be (347.2â���±â��0.4) mA cm(-2) and (189.0â���±â��0.2) mA cm(-2), respectively. The Schottky barrier heights of the devices (0.52â���±â��0.07) eV and (0.63â���±â��0.09) eV, respectively, were extracted from the forward dark current characteristics.
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